Micron Technology, Inc. announced today that it is launching the industry’s highest-density, radiation-tolerant single-layer cell (SLC) NAND product. With a die capacity of 256 gigabits (Gb), this product is the first in a portfolio that will include space-qualified NAND, NOR and DRAM solutions. The product is available now and represents the first in its class to be offered by any major memory manufacturer.

The space economy is skyrocketing, fueled by rapid growth in commercial and government missions. As computing and AI evolve, demand is rising for high-performance technology capable of processing data directly in orbit. AI-enabled edge computing is transforming space operations: allowing spacecraft to analyze sensor data, detect anomalies and make decisions autonomously, reducing reliance on Earth-based systems and preserving bandwidth.

As the only U.S.-based memory manufacturer, Micron provides the end-to-end supply chain control paramount for aerospace and government sectors, providing quality, longevity, security, traceability and supply continuity. This advantage is bolstered by recently announced plans to strengthen Micron’s U.S.-based manufacturing. These plans include modernizing the company’s Manassas, Virginia, facility and expanding its portfolio of NOR, SLC NAND and DDR3, with longevity supply of DDR4 and LPDDR4 for critical applications such as aerospace.

Building on its newly launched aerospace portfolio, Micron plans to introduce additional space-qualified memory and storage solutions in the coming year and beyond to address the evolving demands of next-generation space missions.