According to South Korean media ZDNetKorea, global Memory giants Samsung Electronics and SK Hynix plan to simultaneously push forward with "conversion investments" in their most advanced NAND flash Memory in the second quarter of this year, aiming to meet the surging storage demand driven by artificial intelligence.

On the evening of February 2, Maxio Technology released its 2025 annual performance bulletin. During the reporting period, the company achieved total operating revenue of 1.331 billion yuan, with a year-on-year increase of 13.42%. Net profit attributable to the parent company reached 142 million yuan, up 20.36% year-on-year, while net profit after deducting non-recurring gains and losses amounted to 101 million yuan, representing a significant increase of 130.29% compared to the same period last year.

At a recent "trillion-dollar banquet," NVIDIA CEO Jensen Huang revealed that the company is in full-scale production of its next-generation AI chips, Grace Blackwell and Vera Rubin, and TSMC's production capacity is expected to more than double over the next ten years.

According to South Korean media reports, Samsung Electronics has officially restarted its investment in the NAND flash Memory production line at its P4 plant in Pyeongtaek, with related production equipment beginning to be moved into the plant.

As part of this renewed agreement, Sandisk will pay Kioxia USD 1.165 billion for manufacturing services and continued availability of supply. These cash payments will be made in installments over the years 2026 to 2029.

Well-suited for smartphones and tablets, Kioxia QLC UFS also supports emerging product categories that demand higher capacity and performance, including PCs, networking, AR/VR, IoT, and AI-enabled devices.

Join us on March 27 at the Shenzhen Qianhai JW Marriott Hotel for CFMS｜MemoryS 2026. Under the theme "Transcending Cycles · Unleashing Value" we will convene leading Memory manufacturers, application providers, and ecosystem partners. Together, we will tackle the critical questions: How to fully unleash the potential and commercial value of storage technology? How to break through growth stagnation and forge a highly efficient, new industrial ecosystem for the AI era?

The results significantly exceeded the previous record set in 2024. The annual revenue increased by more than 30 trillion won while the annual operating profit nearly doubled year-on-year, marking the highest annual performance in the company’s history.

In terms of upstream resources, last Friday saw price adjustments for 1Tb QLC, 1Tb TLC, 512Gb TLC, and 256Gb TLC to $19.00, $20.00, $16.00, and $10.00 respectively. This week, the price for DDR5 16Gb eTT was raised to $22, while prices for other DDR5 and DDR4 chips remained unchanged.

Micron broke ground on an advanced wafer fabrication facility located within the company's existing NAND manufacturing complex in Singapore. This new facility represents a planned investment of approximately US $24 billion (SG $31 billion) over 10 years and is designed to ultimately provide 700,000 square feet of cleanroom space.

According to media reports, Winbond Electronics' operational focus this year is primarily on ramping up new product volumes and adjusting production capacity allocation.

Samsung recently established a new HBM development roadmap and has notified its suppliers, requesting them to formulate supply plans by March.

He noted that the current tight supply of Memory is likely to extend until 2027 or even 2028, though the severity of the shortage is not expected to return to levels seen five years ago.

In addition to Microsoft, other major technology companies are also set to adopt low-power DRAM in their AI data centers, heralding new opportunities for the Memory industry.

Samsung Electronics employs a 4nm process for HBM4 logic dies. The chip development and mass production are handled by the System LSI division and the Foundry division within the Device Solutions (DS) business unit. Furthermore, Samsung has been confirmed to be designing logic chips for custom HBM using a 2nm process.