CMM, short for CXL Memory Module, is a memory specification based on CXL by the international semiconductor standardization organization JEDEC. Inside Samsung, CXL is commonly referred to as CMM.

According to industry sources on Nov. 26, SK hynix is preparing to integrate 2.5D Fan-out packaging technology into its next generation of DRAM after HBM.

Samsung Electronics is developing Low Latency Wide IO (LLW) DRAM, with mass production targeted by the end of next year.

The market for the next-generation HBM3E, a high-performance semiconductor for artificial intelligence within the High Bandwidth Memory (HBM) sector, is heating up. As Samsung Electronics, SK hynix, and Micron all gear up to mass-produce 5th generation HBM3E, the competition is expected to intensify.

According to industry sources on Oct. 17, Samsung Electronics is sending Shinebolt prototypes, a product of HBM3E, to client companies for quality approval tests. The prototype stacks 24 gigabit (Gb) chips in 8 layers, and it is reportedly soon to finish the development of a 36 gigabyte (GB) product with 12 layers.

Samsung commercialized HBM for high-performance computing (HPC) in 2016 for the first time in the world.

With demonstrated in-system functionality at speeds up to 7,200 MT/s, Micron’s 1β DDR5 DRAM is now shipping to all data center and PC customers.

The majority of this inventory consists of the older Double Data Rate (DDR) 4, making it challenging for both companies to quickly reduce their stockpiles.

Samsung Electronics, in July, became the first to develop cutting-edge GDDR7 and has been providing samples to Nvidia for the verification of its integration into next-gen systems. SK hynix also plans to complete its GDDR7 development within the year.

According to semiconductor industry sources on the 24th, SK hynix’s Wafer Level Package (WLP) division, under their PKG&Test organization, recently decided to reallocate and reinforce their post-processing technological staff as part of their internal Career Growth Program (CGP).

Samsung is aiming to unveil HBM3P, a fifth-generation HBM chip, in the second half of this year and more than double the current HBM production capacity and advanced packaging services next year.

SK hynix Inc. announced today that it successfully developed HBM3E1, the next-generation of the highest-specification DRAM for AI applications currently available, and said a customer’s evaluation of samples is underway.

NVIDIA today announced the next-generation NVIDIA GH200 Grace Hopper platform - based on a new Grace Hopper Superchip with the world's first HBM3e processor - built for the era of accelerated computing and generative AI.

However, it will take some time to commercially apply W2W technology due to defect issues.

The demand for high-performance memory semiconductors essential for AI chips is experiencing explosive growth due to the escalating demand for AI chips among global tech companies involved in the cloud server business.