The global DRAM market size in the second quarter of 2025 increased by 20% quarter-on-quarter to $32.101 billion, marking a new historical quarterly high.

SK Hynix expects this market for custom HBM to grow to tens of billions of dollars by 2030, Choi said.

Sandisk Corporation announced it has signed a landmark Memorandum of Understanding (MOU) with SK hynix to work together to establish the specification for High Bandwidth Flash – a new technology designed to deliver breakthrough memory capacity and performance for the next generation of AI inferences. Through this collaboration, the companies expect to standardize the specification, define technology requirements and explore the creation of a technology ecosystem for High Bandwidth Flash.

Both revenues and operating profits stood at all-time highs, beating the previous best results in the fourth quarter of last year.

According to Korean media reports, Samsung Electronics has recently completed quality testing of its 12-layer HBM3E products with Broadcom and is now negotiating mass production supply. The current discussions involve an estimated supply volume of approximately 1 billion gigabits (Gb), with mass production expected to begin as early as the second half of this year and extend into next year.

Samsung Electronics achieved a significant technological milestone by securing production readiness approval for its sixth-generation DRAM technology.

SK hynix Inc. plans to build a new semiconductor back-end process facility in central South Korea to enhance its chip-packaging capabilities, industry sources said Tuesday.

According to industry sources on July 19, Samsung Electronics achieved a 50-70% yield rate in performance tests of 10nm (nanometer) class 6th-generation DRAM wafers last month. This marks substantial progress compared to the less than 30% yield rate recorded for the same product last year.

The HBM3E used in the MI350 series is believed to be Samsung’s 36GB 12-layer DRAM, completed last year. The chip vertically stacks 24Gb DRAM dies using through-silicon sia (TSV) technology, offering 36GB per package.

Micron plans to ramp HBM4 in calendar year 2026, aligned to the ramp of customers’ next-generation AI platforms.

SK hynix plans to begin mass production of 12-layer HBM4 chips in the fourth quarter of 2025, supplying initial volumes to Nvidia once Rubin’s launch timeline and order size are confirmed.

Chip giant SK hynix has reported that its U.S. sales accounted for over 70 percent of its total revenue in the first quarter on rising demand for premium high bandwidth memory (HBM) chips from major U.S. tech companies.

During its first-quarter earnings call with analysts, Kim Jae-joon, executive vice president of Samsung’s memory business, said the company is already collaborating with multiple customers on custom versions based on both HBM4 and the enhanced HBM4E.

Samsung Electronics posted KRW 79.14 trillion in consolidated revenue, an all-time quarterly high, on the back of strong sales of flagship Galaxy S25 smartphones and high-value-added products. Operating profit increased to KRW 6.7 trillion despite headwinds for the DS Division, which experienced a decrease in quarterly revenue.

SK hynix Inc. announced today that it recorded 17.6391 trillion won in revenues, 7.4405 trillion won in operating profit (with an operating margin of 42%), and 8.1082 trillion won in net profit (with a net margin of 46%) in the first quarter this year.