From January to September this year, the share of Chinese Mainland in South Korea's memory export regions dropped to 37.9%, which remained at 40% until May this year, fell to 39% in June, and has continued to decline since then. The proportions for 2022 and 2023 are 51.4% and 44.7%, respectively.

According to ChinaFlashMarket, various manufacturers have recently released prices for DDR5 in the fourth quarter. As supply gradually becomes sufficient, the increase has converged to single digits. However, the huge price difference between DDR5 and DDR4, as well as the trade-off between input-output ratio under high capital investment, have affected the motivation of some customers to promote DDR5 penetration.

In the DRAM area, SK hynix is continuing the rapid transition from existing HBM3 to 8-layer HBM3E products. The company also plans to start supplying 12-layer HBM3E products, which were mass-produced last month, in the fourth quarter as scheduled. This makes HBM sales, which accounted for 30% of total DRAM revenues in the third quarter, expected to reach 40% in the fourth quarter.

SK Hynix's CEO Kwak Noh-jung recently stated that the company is striving to ship and supply its 12 layer HBM3E as planned, and has given a positive outlook on the demand for artificial intelligence.

According to informed sources, Samsung is currently discussing plans to redesign some of the 1a DRAM circuits internally, but has not yet made a final decision as this decision involves various risks.

SK Hynix's robust supply chain and strategic partnerships have positioned the company to exceed market expectations.

According to South Korean securities firms, SK Hynix's third quarter revenue is expected to reach KRW 18 trillion (approximately USD 13.4 billion), a month on month increase of 9.6% and a year-on-year increase of 98.5%. Operating profit is expected to be KRW 6.76 trillion (approximately USD 5.04 billion), a month on month increase of 23.6%.

For products with fierce local competition, they will lower prices that lack demand support and adopt an attitude of adapting to the market to maintain their market share. Therefore, the market structure fluctuates, and different product lines emerge from their own independent market trends.

SK hynix announced that it has begun mass production of the world’s first 12-layer HBM3E product with 36GB, the largest capacity of existing HBM to date.

The semiconductor industry anticipates full commercialization of CXL in the second half of 2024, coinciding with the release of the first server CPUs featuring the "CXL 2.0" specification. In preparation for this, SK hynix is currently validating CXL 2.0 memory in 96 GB and 128 GB capacities with customers. The company plans to begin mass production by the end of the year.

SK Hynix is prioritizing the development and mass production of cutting-edge HBM memory, phasing out traditional HBM products. The company plans to transform its Iksan M10F factory from DRAM production to HBM, aiming to enhance the supply capacity of HBM3E memory.

Micron Technology has announced the volume production of its 12-layer High Bandwidth Memory 3 Extended (HBM3E) chips, featuring a capacity of 36GB and speeds exceeding 9.2Gb/s. The new memory stacks are designed for next-generation AI GPUs and are currently undergoing customer validation.

A-DATA's financial report indicates a marginal month-on-month decrease of 0.8% in August revenue, with a year-on-year increase of 1.95%. The company maintains an optimistic stance on the DRAM market, expecting supply to tighten in the coming quarters due to increased HBM production.

Samsung Electronics has outlined its development blueprint for future memory products, with plans to introduce DDR memory using 1c nm process technology in 2024, followed by the final 10nm-class 1d nm DDR memory in 2026. The company also anticipates entering the sub-10nm DRAM process node with the 0a nm DDR memory in 2027, marking significant advancements in memory technology.

Micron Technology has announced that its 12-layer stacked High Bandwidth Memory (HBM3E) with a capacity of 36GB has entered mass production and is being delivered to key industry partners for validation in AI ecosystems. The new memory offers more than 1.2TB/s of memory bandwidth and lower power consumption compared to existing 8-layer stacked HBM3E products.