However, it will take some time to commercially apply W2W technology due to defect issues.

The demand for high-performance memory semiconductors essential for AI chips is experiencing explosive growth due to the escalating demand for AI chips among global tech companies involved in the cloud server business.

South Korean chip equipment company Hanmi Semiconductor Co. said on Wednesday it has opened a new factory to boost the production of dual TC bonders, essential process equipment for the production of high bandwidth memory (HBM) used in artificial intelligence (AI) semiconductors.

According to sources in the semiconductor industry on July 31, domestic memory semiconductor companies such as Samsung Electronics and SK hynix are pushing for the expansion of dedicated HBM lines.

Samsung Electronics reported financial results for the second quarter ended June 30, 2023.

SK hynix Inc. today reported financial results for the second quarter of 2023. The company recorded revenue of 7.306 trillion won, operating loss of 2.882 trillion won (with operating margin of negative 39%), and net loss of 2.988 trillion won (with net margin of negative 41%) for the three-month period ended June 30, 2023.

According to industry sources on July 3, Samsung Electronics will first make a change in personnel at the DRAM Development Office in its Memory Business Group. Hwang Sang-jun, a vice president who worked in the Memory Strategic Marketing Office, has been tapped as the new head of the DRAM Development Office.

Samsung Electronics is speeding up research and development (R&D) of 3D DRAMs.

Samsung Electronics announced on Nov. 11 that it has developed Hybrid-Substrate Cube (H-Cube) technology, its latest 2.5D packaging solution specialized for semiconductors for HPC, AI, data center and network products that require high-performance and large-area packaging technology.

SK hynix Inc. announced on Oct. 20 that it has become the first in the industry to successfully develop the High Bandwidth Memory 3, the world’s best-performing DRAM.