SK Hynix's CEO Kwak Noh-jung recently stated that the company is striving to ship and supply its 12 layer HBM3E as planned, and has given a positive outlook on the demand for artificial intelligence.

According to informed sources, Samsung is currently discussing plans to redesign some of the 1a DRAM circuits internally, but has not yet made a final decision as this decision involves various risks.

SK Hynix's robust supply chain and strategic partnerships have positioned the company to exceed market expectations.

According to South Korean securities firms, SK Hynix's third quarter revenue is expected to reach KRW 18 trillion (approximately USD 13.4 billion), a month on month increase of 9.6% and a year-on-year increase of 98.5%. Operating profit is expected to be KRW 6.76 trillion (approximately USD 5.04 billion), a month on month increase of 23.6%.

For products with fierce local competition, they will lower prices that lack demand support and adopt an attitude of adapting to the market to maintain their market share. Therefore, the market structure fluctuates, and different product lines emerge from their own independent market trends.

SK hynix announced that it has begun mass production of the world’s first 12-layer HBM3E product with 36GB, the largest capacity of existing HBM to date.

The semiconductor industry anticipates full commercialization of CXL in the second half of 2024, coinciding with the release of the first server CPUs featuring the "CXL 2.0" specification. In preparation for this, SK hynix is currently validating CXL 2.0 memory in 96 GB and 128 GB capacities with customers. The company plans to begin mass production by the end of the year.

SK Hynix is prioritizing the development and mass production of cutting-edge HBM memory, phasing out traditional HBM products. The company plans to transform its Iksan M10F factory from DRAM production to HBM, aiming to enhance the supply capacity of HBM3E memory.

Micron Technology has announced the volume production of its 12-layer High Bandwidth Memory 3 Extended (HBM3E) chips, featuring a capacity of 36GB and speeds exceeding 9.2Gb/s. The new memory stacks are designed for next-generation AI GPUs and are currently undergoing customer validation.

A-DATA's financial report indicates a marginal month-on-month decrease of 0.8% in August revenue, with a year-on-year increase of 1.95%. The company maintains an optimistic stance on the DRAM market, expecting supply to tighten in the coming quarters due to increased HBM production.

Samsung Electronics has outlined its development blueprint for future memory products, with plans to introduce DDR memory using 1c nm process technology in 2024, followed by the final 10nm-class 1d nm DDR memory in 2026. The company also anticipates entering the sub-10nm DRAM process node with the 0a nm DDR memory in 2027, marking significant advancements in memory technology.

Micron Technology has announced that its 12-layer stacked High Bandwidth Memory (HBM3E) with a capacity of 36GB has entered mass production and is being delivered to key industry partners for validation in AI ecosystems. The new memory offers more than 1.2TB/s of memory bandwidth and lower power consumption compared to existing 8-layer stacked HBM3E products.

TSMC has revealed its upcoming plans in the advanced packaging technology sector, emphasizing the significance of integrating AI chip memory and logic chips through 3D IC technology. The company anticipates a substantial reduction in production costs for AI processors and aims to maintain a leading position in packaging innovation by 2027.

SK Hynix, a key player in the semiconductor industry, is set to enhance its High Bandwidth Memory (HBM) offerings by introducing customizable base die technology. This move is aimed at providing clients with tailored solutions that can improve chip efficiency and performance. The company also plans to incorporate chiplet technology into SSD controllers, marking a significant advancement in storage device design.

SK Hynix, a leading global semiconductor supplier, is set to commence mass production of its 12-layer High Bandwidth Memory 3E (HBM3E) by the end of September. This move is expected to solidify the company's position at the forefront of the memory technology market, catering to the burgeoning needs of AI servers.