The PM9E1 is Samsung Electronics’ industry-leading PC SSD in terms of performance and capacity, with sequential read and write speeds of up to 14.5 gigabytes (GB) per second.

Driven by supply control at the resource end and trade speculation, the spot prices of 512Gb/1Tb Flash Wafers have been rising continuously for nearly two months, with a cumulative increase of over 20%.

Samsung Electronics presented a target pin speed of over 13Gbps for HBM4E, which is under development for 2027. HBM4E has 2,048 pins for data transfer, which translates to 3.25TB/s when converted to bytes (1 byte equals 8 bits). Simultaneously, Samsung Electronics stated that the power efficiency of HBM4E would be more than twice that of the current HBM3E, which is 3.9 picojoules (pJ) per bit.

Kioxia is working with Nvidia to build extremely fast AI SSDs to augment high-bandwidth memory (HBM) by being directly connected to GPUs, with 2027 availability.

The abandonment of SOCAMM1, if accurate, resets what was expected to be a fast-tracked rollout of modular LPDDR-based memory in Nvidia’s data center stack. SOCAMM has been positioned as a new class of high-bandwidth, low-power memory for AI servers, delivering similar benefits to HBM but at a lower cost.

Samsung Electronics aims to expand HBM supply with the P5 groundbreaking.

The global DRAM market size in the second quarter of 2025 increased by 20% quarter-on-quarter to $32.101 billion, marking a new historical quarterly high.

SK Hynix expects this market for custom HBM to grow to tens of billions of dollars by 2030, Choi said.

Sandisk Corporation announced it has signed a landmark Memorandum of Understanding (MOU) with SK hynix to work together to establish the specification for High Bandwidth Flash – a new technology designed to deliver breakthrough memory capacity and performance for the next generation of AI inferences. Through this collaboration, the companies expect to standardize the specification, define technology requirements and explore the creation of a technology ecosystem for High Bandwidth Flash.

Both revenues and operating profits stood at all-time highs, beating the previous best results in the fourth quarter of last year.

According to Korean media reports, Samsung Electronics has recently completed quality testing of its 12-layer HBM3E products with Broadcom and is now negotiating mass production supply. The current discussions involve an estimated supply volume of approximately 1 billion gigabits (Gb), with mass production expected to begin as early as the second half of this year and extend into next year.

Samsung Electronics achieved a significant technological milestone by securing production readiness approval for its sixth-generation DRAM technology.

SK hynix Inc. plans to build a new semiconductor back-end process facility in central South Korea to enhance its chip-packaging capabilities, industry sources said Tuesday.

According to industry sources on July 19, Samsung Electronics achieved a 50-70% yield rate in performance tests of 10nm (nanometer) class 6th-generation DRAM wafers last month. This marks substantial progress compared to the less than 30% yield rate recorded for the same product last year.

The HBM3E used in the MI350 series is believed to be Samsung’s 36GB 12-layer DRAM, completed last year. The chip vertically stacks 24Gb DRAM dies using through-silicon sia (TSV) technology, offering 36GB per package.