Among this, the US market was particularly outstanding, generating 84.5648 trillion won ($59.85 billion) in revenue, accounting for a staggering 64.1% of SK Hynix's total sales. Compared to 27.8344 trillion won in the same period last year, revenue from the US market surged by 203.8% in the first half of this year. This historic breakthrough is primarily attributed to the continued supply-demand imbalance in high-bandwidth memory (HBM), commodity DRAM, and NAND flash memory, which has kept product prices on a strong upward trajectory.

According to South Korean media reports, Samsung Electronics has set a target of September this year for the completion of development of its 7th-generation 10-nanometer-class DRAM (1d DRAM), and plans to initiate the production handover process in December, with first mass production expected by the end of next year.

In the first half of this year, Samsung's DS division generated sales of 209.2 trillion won, accounting for 68.5% of the company's total sales of 305.4 trillion won. Furthermore, it contributed an operating profit of 142.9 trillion won, representing a staggering 97.4% of Samsung's total operating profit.

According to South Korean media, driven by the surging demand for high-bandwidth memory (HBM) amid expanding investments in AI infrastructure, Samsung Electronics is planning to relocate part of its back-end operations for legacy memory from its factories in Cheonan and Onyang, Chungcheongnam-do, South Korea, to Vietnam. This move aims to refocus its domestic back-end manufacturing capabilities on high-value-added products like HBM.

According to Korean media citing industry sources, although Samsung's initial HBM4 yield during mass production in February of this year briefly fell below 60%, its yield has recently approached 80%, which is about four months ahead of the original year-end target of 80%.

The company approved a total investment of approximately 54 trillion, 35.2 trillion won in Yongin “Y2” fab and 19.1 trillion won in the Cheongju “M17” fab, in a board meeting.

Samsung Electronics showcased its latest AI memory portfolio and technology roadmap at the 2026 Flash Memory Summit (FMS) in Santa Clara, unveiling the industry's first zHBM concept, zNAND‑O concept, and V10 BV‑NAND with over 400 layers, along with a suite of integrated solutions designed to advance future AI infrastructure.

SK hynix Inc. announced in collaboration with Sandisk that it has unveiled the first standard specifications for High Bandwidth Flash (HBF), a next-generation storage technology.

According to industry sources cited by media outlets, Samsung Foundry is ramping up efforts to hit its target of 100% capacity utilization in the second half of this year. Its current overall utilization rate stands at roughly 70%–80%. Given the existing order backlog and progress in contract negotiations, internal and external stakeholders are optimistic about achieving the goal, which is expected to reverse its prolonged run of operating losses.

During its Q2 2026 earnings call, Samsung Electronics stated that the AI computing boom is driving a rapid surge in server memory demand, and the supply-demand gap in the memory market is expected to widen further next year.

SK Hynix achieved record-high earnings in the second quarter of its fiscal year 2026. During the subsequent earnings call, the company stated that improvements in AI efficiency will expand industry demand, and AI infrastructure investment will remain robust in the long term. While short-term DRAM ASPs have been relatively weak due to product mix shifts, they are expected to improve in the second half of the year as HBM4 shipments ramp up. Currently, the iteration of new HBM products is progressing smoothly. The company is stabilizing the market through long-term agreements and maintaining steady and efficient capacity investments.

SK Group and NVIDIA have announced plans for a $500 billion plus comprehensive partnership to establish AI infrastructure serving the surging demand for global compute.

The companies expect the collaboration to be estimated at more than $200 billion across memory and foundry over the next five years through 2030.

According to South Korean media reports, Samsung Electronics plans to launch a dedicated solution for AI inference this August, integrating Processing-in-Memory (PIM) technology onto LPDDR5X memory.

According to media reports, Samsung Electronics held a special seminar at the "AMD Advancing AI 2026" event and announced the results of its collaboration with AMD. James Ahn, a senior engineer at Samsung, said that Samsung's HBM4 will be used in AMD's latest AI accelerators, the Instinct MI455X, and the Helios platform. Under the architecture, the Instinct GPU series uses HBM4 and HBM3E, the server CPU EPYC series uses RDIMM DRAM modules, and the Helios platform employs both RDIMM and HBM4. It is reported that the partnership between AMD and Samsung will be further strengthened in the next-generation product, HBM4E (7th-generation HBM).