Samsung 1d DRAM Reportedly Passes Thermal Test Yield Targets, Mass Production Timeline Revealed

Yield Improvement Exceeds Expectations, Development Completion Targeted for September 

According to South Korean media reports, although commercialization of 1d DRAM still requires more time, Samsung Electronics has already raised its yield to a satisfactory level sufficient to pass thermal testing under high-temperature conditions. The yield improvement rate for 1d DRAM is assessed to have exceeded expectations. While specific figures have not been disclosed, thermal test yields have already reached target levels, and the current focus is on securing yields in low-temperature cold testing.

In terms of timeline, Samsung Electronics has set a target of September this year for the completion of development of its 1d DRAM, and plans to transfer R&D results to mass production lines in December, with first mass production expected by the end of next year.

However, informed sources revealed that, given profitability considerations, mass production would be difficult to achieve under the current development model. Samsung is also streamlining the manufacturing process on mass production lines by simplifying process steps. Although this may slow development, product integrity is expected to improve significantly, further enhancing product performance and cost competitiveness.

HBM5E Deployment Ahead, Advanced Process Layout Accelerated

As the commercialization timeline itself is relatively far off, the impact on the product release roadmap is not expected to be significant. Samsung Electronics has officially announced that it will apply 1d DRAM to HBM5E, with products expected to be launched around 2030. After adopting 2nm process technology in HBM5, Samsung's deployment of 1d DRAM in HBM5E will further increase utilization of its advanced process nodes. Regarding specific R&D progress, Samsung currently states that it cannot confirm details.