Sources Indicate Samsung and Nvidia Form Alliance on Next-Generation NAND Development

According to South Korean media citing industry sources, Samsung Electronics is collaborating with NVIDIA to accelerate the development of next-generation NAND flash memory. Researchers from Samsung Electronics' Semiconductor Research Institute, Nvidia, and Georgia Institute of Technology developed a "Physics-Informed Neural Operator (PINO)" model capable of analyzing ferroelectric-based NAND device performance more than 10,000 times faster than conventional methods. The research findings were published to the academic community on the 6th.Based on these results, Samsung is working with NVIDIA to develop and commercialize ferroelectric NAND flash memory.