Samsung Reportedly Developing 8-Layer HBM4E for Nvidia

According to Korean media reports, Samsung Electronics is developing an 8-layer 7th-generation high-bandwidth memory (HBM4E) in response to Nvidia's requirements. This represents a significant reduction in stack height compared to the originally planned 12-layer and 16-layer configurations. Nvidia has specified a speed of 17–18 Gbps, approximately 20% higher than the 14.4 Gbps of Samsung's initial HBM4E samples. The product is reportedly intended for use in NVHBM.