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Samsung P4 Fab Builds Faster (2-3M Early), Core 1c DRAM Line for HBM4

By: CFM 2025-12-29 07:44 (UTC+0)

According to South Korean media reports, the construction project of Samsung Electronics' Pyeongtaek P4 fab is being accelerated, with the target for its equipment installation and trial operation moved up by 2 to 3 months from the original schedule. This fab will serve as the core production base for Samsung’s 10nm 6th-gen (1c) DRAM, and Samsung is the first to adopt 1c DRAM for its 6th-gen HBM (HBM4) chips.