New 3D Flash Memory Technology from Kioxia and Sandisk Achieves Industry’s Highest Bit Density for QLC NAND

Kioxia Corporation Kioxia Corporation unveiled their next-generation Quad-Level-Cell (QLC) 3D flash memory technology, which delivers up to 60% increase in bit density compared to their 8th-generation, surpassing 37 Gb/mm² and setting the industry benchmark for bit density, performance and power efficiency.

Leveraging the companies’ revolutionary CMOS directly Bonded to Array (CBA) technology which fabricates CMOS logic and the memory array on separate wafers before bonding them together with high-precision wafer-to-wafer alignment, the new generation improves read and write bandwidth compared to the 8th-generation 3D flash memory and becomes the industry’s first QLC 3D flash memory technology to reach a 4.8 Gb/s interface.

Additional interface enhancements improve I/O data-out transfer power efficiency. These large power efficiency upgrades directly address the power and cooling challenges of modern AI and cloud infrastructure.

Key 10th-genaration QLC 3D flash memory technology highlights include:

332-layer architecture and optimized floorplan design deliver up to 60% increase in bit density, achieving >37 Gb/mm² compared to the 8th-generation.
4.8 Gb/s*3 NAND interface enabled by Toggle DDR6.0 and the Separate Command Address (SCA) protocol to unlock the full potential of fast interface.
CMOS directly Bonded to Array (CBA) architecture enhances density scaling, performance, and manufacturing efficiency.
Power-Isolated Low-Tapped Termination (PI-LTT) improves I/O data-out transfer power efficiency.