Samsung Unveils zHBM, zNAND-O Concept Models and 400+ Layer V10 BV-NAND

Samsung unveiled the industry's first concept models of zHBM and zNAND-O, presenting its vision for the next generation of 3D memory architectures. Designed for advanced AI computing, zHBM presents a new memory architecture that vertically stacks HBM directly above AI accelerators, moving beyond conventional designs in which HBM is positioned alongside the processor. A next-generation interface system incorporating zHBM is expected to deliver approximately eight times the performance of HBM5. With next-generation wafer bonding technology, zHBM can achieve more than 10 times the memory density of HBM5 while enhancing energy efficiency threefold and reducing thermal resistance by more than half. The company also introduced zNAND-O, a next-generation high-performance NAND solution built on its V-NAND technology and in development in four- and eight-layer versions. In addition, Samsung unveiled V10 BV-NAND, featuring its new Bonding V-NAND architecture. By applying wafer bonding technology to stack memory cells, Samsung has increased memory density by approximately 58% over the previous generation (V9).