Samsung Debuts HBM4E at GTC 2026, Unveils Full AI Memory Lineup

At the NVIDIA GTC 2026 conference, Samsung comprehensively showcased its technological lineup in the AI computing field, exhibiting a full range of products from high-performance memory to low-power solutions for personal devices. Samsung unveiled its next-generation HBM4E memory for the first time. This product achieves a per-pin transfer speed of up to 16Gbps and a bandwidth of up to 4.0 TB/s. Additionally, Samsung demonstrated its Hybrid Copper Bonding (HCB) technology. This new technology will enable next-generation HBM to achieve 16 or more stacked layers while reducing thermal resistance by over 20% compared to thermocompression bonding.