Samsung Electronics' 1c DRAM Yield Exceeds 80%, HBM4 Yield Approaches 60%

According to Korean media reports, industry insiders have revealed that Samsung Electronics has internally achieved a yield of over 80% for its 1c DRAM. This represents the highest yield attained under high-temperature conditions (thermal testing). In the fourth quarter of 2025, the yield was approximately 60-70%, but it has now significantly improved and is expected to reach around 90% by May.

Typically, stable yields for DRAM range between 80% and 90%. Reaching this level is crucial for maximizing DRAM profits.

Insiders further noted that the yield for Samsung's HBM4 based on 1c DRAM has also improved, approaching 60%, compared to approximately 50% in the fourth quarter of last year.

In addition to yield improvements, Samsung Electronics is also significantly increasing its 1c DRAM production capacity. The company plans to expand its 1c DRAM capacity from 60,000 wafers per month at the end of last year to 200,000 wafers per month in the second half of this year. Existing DRAM production lines are being converted to 1c lines, with the core of this expansion centered on the P4 plant in Pyeongtaek.