Samsung Electronics Reportedly Developing zNAND-T and zNAND-I Internally to Expand zNAND Product Line

According to industry sources cited by South Korean media, Samsung Electronics is internally developing three types of z-NAND flash memory. In addition to zNAND-O, for which its model has already been publicly demonstrated, these also include zNAND-T and zNAND-I. It is reported that zNAND-T is designed for high throughput, featuring maximized bandwidth to meet the needs of high-capacity, high-performance AI data centers. zNAND-I, meanwhile, maximizes IOPS. Although wider bandwidth allows large amounts of data to be processed at once, higher IOPS means more data I/O operations can be completed per second.