SK hynix Unveils 3D FeNAND A-CiM Technology

SK hynix disclosed that its research team focused on analog compute-in-memory (A-CiM), an architecture that combines data storage and computation, and proposed an approach based on 3D FeNAND that co-optimizes cell, non-cell, and page schemes. SK hynix's research team found that 3D FeNAND outperforms conventional 3D CTN NAND in precisely controlling multiple current levels at a lower power, making it a memory architecture highly suitable for A-CiM. 3D FeNAND can store more weights at once and use them directly for computation, reducing the need for reloading. Under the same chip-area constraints, it also delivered approximately 10 to 20 times higher throughput and around 4,000 to 5,000 times greater energy efficiency than conventional 3D arrays.