Intrinsic Ferroelectricity of Gallium Oxide at Room Temperature Confirmed

Recently, Beijing University of Posts and Telecommunications, in collaboration with Hong Kong Polytechnic University and other institutions, experimentally verified the room-temperature intrinsic ferroelectricity of gallium oxide, an ultrawide bandgap semiconductor. The findings were published in Science Advances.

Using MOCVD technology, the team successfully fabricated epitaxial κ-Ga₂O₃ thin films and observed stable ferroelectric switching, achieving devices with an on/off ratio exceeding 10⁵ and endurance over 10⁷ cycles.

The finding resolves the long-standing conflict between the rigid structure required for wide bandgap semiconductors and the atomic flexibility needed for ferroelectricity, paving the way for integrating high-power and non-volatile memory functions in a single material platform.