Kioxia plans to begin mass production of its 10th generation (BiCS 10) NAND flash memory next year. Reportedly, BiCS 10 features a staggering 332-layer storage stack. Compared to the previous 218-layer generation, it delivers a 59% increase in areal storage density and a 33% boost in data transfer speeds.These advancements will translate to significantly greater storage capacity and faster performance. The new flash memory is primarily intended for the manufacturing of ultra-high-capacity SSDs and will most likely be specially optimized for the AI market.