Samsung, Nvidia Form Alliance on Next-Generation NAND Development

According to South Korean media citing industry sources, Samsung Electronics is collaborating with NVIDIA to accelerate the development of next-generation NAND flash memory.

Researchers from Samsung Electronics' Semiconductor Research Institute, Nvidia, and Georgia Institute of Technology developed a "Physics-Informed Neural Operator (PINO)" model capable of analyzing ferroelectric-based NAND device performance more than 10,000 times faster than conventional methods. The research findings were published to the academic community on the 6th.Based on these results, Samsung is working with NVIDIA to develop and commercialize ferroelectric NAND flash memory.

Ferroelectric NAND, made with ferroelectric materials instead of conventional silicon, is attracting attention as a breakthrough technology that could address both supply shortages and power constraints facing big tech companies including Nvidia. The technology enables high-density stacking up to 1,000 layers while reducing power consumption by up to 96%.

This research draws particular attention as a collaboration between Samsung Electronics and Nvidia, its largest memory partner, to strengthen competitive advantage in ferroelectric technology. For Nvidia, investing in new technology could address memory supply shortages that may disrupt its AI accelerator supply chain and power constraints that could burden its data center customers.