Samsung Electronics Reportedly Expects HBM to Account for Nearly 30% of Global DRAM Capacity Next Year

According to foreign media reports, a Samsung Electronics executive said that high-bandwidth memory (HBM) is expected to account for nearly 30% of the total wafer capacity of dynamic random-access memory (DRAM) chipmakers next year, up from about 20% at present. Kim Tae-woo, executive vice president of Samsung Electronics, said that HBM and conventional DRAM compete for the same wafer capacity, which means that expanding HBM production could limit the supply of conventional DRAM.