Samsung Electronics' 8-inch Gallium Nitride (GaN) Foundry to Commence Production as Early as Q2 2026

According to foreign media reports, Samsung Electronics is about to launch operations at its 8-inch (200mm) gallium nitride (GaN) power semiconductor foundry, with full production expected as early as the second quarter of 2026. The foundry will operate on a turnkey service model, not involving chip design. Samsung has established a corresponding GaN solution system and possesses the capability to produce its own epitaxial wafers. Industry sources indicate that the initial revenue of the GaN foundry is expected to be within 100 billion won (approximately 462 million yuan).

It is worth noting that TSMC previously announced plans to terminate GaN wafer production in 2027, while Samsung Semiconductor initially announced in 2023 that it would begin production of this business in 2025, indicating a delay in the actual progress. In addition to GaN, Samsung Electronics also plans to advance its silicon carbide (SiC) power semiconductor wafer foundry business, with the two complementing each other across different voltage ratings.