Samsung HBM4E Yield Reportedly Tops 70%, D1d on Track for November PRA

According to media reports, Samsung Electronics' CTO and Head of the Semiconductor Research Institute, Song Jai Hyuk, stated at an internal DS Division business briefing that the reliability test yield for HBM4E has surpassed 70%. Regarding next-generation DRAM process development, Song Jai Hyuk indicated that the D1d process has achieved technological competitiveness ahead of rivals and has set a development goal of obtaining Production Readiness Approval (PRA) by November this year.