To proactively address the surging global demand for AI memory, SK Hynix has formulated a medium- to long-term investment strategy totaling 110 trillion won (approximately $71.3 billion).
The strategy will be implemented in phases, with investments of 60 trillion won allocated to Yongin, 10 trillion won to Cheongju, and 40 trillion won to the southwestern region.
To meet the rapidly growing demand for DRAM, SK Hynix will accelerate the completion of the fourth fabrication plant (fab) at the Yongin semiconductor cluster by 12 years, bringing it forward to 2033 from the original target of 2045. Yongin will continue to serve as the cornerstone of SK Hynix's future competitiveness.
SK Hynix will invest 10 trillion won (approximately $648 million) in Cheongju to expand its NAND flash memory capacity. This marks the company's first major NAND capacity expansion at the site since the M15 fab was completed in 2018. The investment will be used to build a new NAND flash fab, install production equipment, and expand advanced packaging capabilities for HBM backend processing. SK Hynix plans to further develop Cheongju into a comprehensive manufacturing hub encompassing NAND, HBM, and advanced packaging.
Additionally, SK Hynix plans to invest 40 trillion won (approximately $2.593 billion) to build a new semiconductor cluster in the southwestern region. This investment will be rolled out in stages, covering land acquisition, fab construction, and production equipment installation.
This strategic decision reflects SK Hynix's proactive response to the rapidly growing global demand for AI memory. The company will advance its investments flexibly based on market conditions and its own investment principles, and will proceed with the construction of new chip manufacturing plants as planned.
