Intel Unveils XBM Memory Patent Technology, Aiming at HBM4

Intel has unveiled a new patented technology called XBM, which is designed as an alternative to HBM4 and offers higher bandwidth capabilities. XBM stands for Extended Bandwidth Memory and is a DRAM memory solution. Its package size will remain consistent with HBM4, with each chip's capacity ranging from 0.5GB to 5GB, featuring a 32GT/s UCIe universal chiplet interconnect interface. The core breakthrough lies in the migration of the manufacturing process. Traditional DRAM memory cells are fabricated in the front-end-of-line (FEOL), which is the underlying silicon substrate natively used for transistor fabrication. In contrast, XBM moves the 1T1C memory cell to the back-end-of-line (BEOL), placing it within the metal via stack region above the transistors, and employs thin-film transistor (TFT) technology.