Samsung Electronics Unveils V10 BV-NAND with Over 400 Layers

V10 is Samsung's latest 3D NAND flash memory, developed to meet the growing demand for high-performance, high-capacity, and energy-efficient storage in the AI era. Built on Samsung's 3D Bonded-VNAND architecture, the V10 features over 400 word lines (WL). The key to achieving over 400 layers lies in the3-stack HARC (High Aspect Ratio) Merge technology. Rather than stacking over 400 layers in a single pass, this approach divides them into three stacked sections, creates each section separately, and then vertically connects them. Compared to the previous-generation V9, V10 delivers a bit density improvement of over 58%, a data I/O speed of over 4.8 Gbps, a performance boost of over 33%, and a power consumption reduction of over 25%. Samsung Electronics plans to deploy the V10 in ultra-high-capacity 128TB SSDs and next-generation PCIe 7.0 SSDs.