Peking University Breaks Through with 1-Nanometer Ferroelectric Transistor

On February 23, a team from Peking University successfully reduced the physical gate length of ferroelectric transistors to just 1 nanometer, creating the world's smallest and most power-efficient ferroelectric transistor. This groundbreaking device combines non-volatile memory and logic computation capabilities, making it a natural fit for the storage-computation integration architecture. It operates at an ultra-low voltage of 0.6V, achieving power consumption levels that surpass current international industry standards by an order of magnitude. The research findings were published online in the prestigious journal Science Advances.