Kioxia/SanDisk Begin Sampling 332-Layer 1Tb TLC, Boosting Bit Density by 59%

Kioxia and SanDisk have jointly announced that their 1Tb TLC NAND flash memory, based on the 10th-generation BiCS FLASH™ 3D flash technology, is now available for sampling. Primarily targeting enterprise and data center SSDs, the new product is designed to meet the demands of the AI era for high-performance, large-capacity, and low-power storage solutions. It will be manufactured at Fab 2 of Kioxia's Kitakami plant in Iwate Prefecture, Japan, utilizing existing advanced equipment.The 10th-generation BiCS FLASH NAND features an interface speed of 4.8 Gb/s, marking a 33% increase over the 8th generation. Through 332-layer stacking and lateral density optimization, the storage density exceeds 29Gb/mm², delivering a 59% improvement in bit density.