Samsung Electronics Xi'an Wafer Fab Reportedly Begins Mass Production of V8 (236-Layer) 3D NAND Flash Memory

According to South Korean media reports, Samsung Electronics' NAND wafer fab in Xi'an, China, has recently completed a process technology upgrade and achieved mass production of its eighth-generation V-NAND (V8 NAND) with 236 layers. The process upgrade began in 2024 and was aimed at converting the existing V6 (128L) NAND production to improve product performance and manufacturing efficiency, enhance production capacity competitiveness, and meet the demand for high-performance storage devices in the AI era. The next target for Samsung Xi'an wafer fab is the V9 NAND with 286 layers, with related production lines to be located at the X2 fab. The company plans to complete the transition and achieve mass production within 2026.